November Dinner Meeting

Topic: Silicon Carbide (SiC) Power Electronics

Note: This meeting counts for 1 Continuing Eduction Credit in both Indiana and Illinois

Speaker: Alexander B. Lostetter, Ph.D.

Alexander B. Lostetter, Ph.D. is the President-CEO and majority owner of Arkansas Power Electronics International, Inc. (APEI, Inc.) based in Fayetteville, Arkansas. Dr. Lostetter received his B.S.E.E. and M.S.E.E. degrees from Virginia Polytechnic Institute and State University in 1996 and 1998, respectively, and his Ph.D. in Microelectronics from the University of Arkansas in 2003. Dr. Lostetter joined APEI, Inc. in 1999 and took over majority ownership in 2002. He has published over 75 articles and journal papers in the area of power electronics systems, design, miniaturization, and packaging, including a chapter in the IEEE released Advanced Packaging, 2nd Edition textbook with the chapter entitled "Power Electronics Packaging". Dr. Lostetter has been the prime investigator or Co-PI on federal, state, and commercial awarded R&D contracts totaling in excess of $20 million, and he has more than a dozen patent filings in power electronics and silicon carbide systems. Dr. Lostetter was the PI for work leading to an international R&D100 Award, in which APEI, Inc.'s "High Temperature Silicon Carbide Power Modules" was selected as one of the top 100 new technology breakthroughs in the world in 2009 by the international community and R&D Magazine.

Dr. Lostetter has been recognized as a leader in the Arkansas engineering and business community on a number of occasions, including: the 2006 University of Arkansas Young Engineering Alumni Award, a Top 40 Under 40 Arkansas Business Leader Award by the Arkansas Business Journal in 2005, and a Top 10 Under 40 Arkansas Business Leader of the Decade Award by the Arkansas Business Journal in 2006.

Topic: Silicon Carbide (SiC) Power Electronics

Arkansas Power Electronics International, Inc. is at the forefront of a revolution in the power electronics industry- the introduction of silicon carbide. SiC can operate at temperatures up to 600 degrees Celsius, can reduce transistor losses by an order of magnitude, and can operate ten times the speed of silicon counterparts. These advantages enable extremely high efficiency, small/lightweight power electronics systems for a wide range of applications, ranging from hybrid-electric vehicles, to military/aerospace systems, to renewable energy power converters.

Please make your reservation below or by contacting Chad Rickwalski by Phone (219-647-4295) or E-Mail (crichwalski@nisource.com).